Emerging contaminants gallium (Ga) and indium (In) are commonly used in semiconductor manufacturing and electro-optical industries. Recent studies have shown that the concentrations of Ga and In in the environment are elevated, which might increase our risk of exposure to Ga and In through crop consumption, and further cause warmful effects to human health. Due to the facts that rice is the staple food for over 90 % of the population in Asia area, and limited information is available on the accumulation of Ga and In in rice grains to date, assessing the potential effect of Ga and In on the plant growth and their accumulation in rice grains is important. Pot experiments were conducted to investigate the effects of Ga and In on the growth and the accumulation of Ga/In in rice plants grown in various soils. Rice plants were grown in three soils (Pc, TWz and Cf series soils) spiked with 30, 50, 100 mg kg^-1 of Ga or In, respectively. In acidic soils (Pc and TWz soils), the concentrations of Ga and In in pore water were increased with increased concentration of Ga/In-spiked in soils, and the aluminium (Al) concentration in Pc soils were higher than TWz soils during the growth time, due to the higher amount of available Al in Pc soils. In alkaline soil (Cf soil), the results of pore water indicated the concentrations of Ga, In, and Al were decreased with growth time in all treatments. In addition, it was also found that the concentrations of Ga, In, and Al in pore water of Cf soils were lower than in Pc and TWz soils for the same Ga/In-spiked treatments because of the lower solubility of those elements in alkaline soils. Based on the above results, it is predicted that the plant growth and Ga/In accumulation in rice grains could be affected by the concentrations of Ga, In and Al in pore water of three tested soils.